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Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth |
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| Authors: | Mathieu Helfrich Roland Gröger Alexander Förste Dimitri Litvinov Dagmar Gerthsen Thomas Schimmel Daniel M Schaadt |
| Affiliation: | 1.DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik,Karlsruhe Institute of Technology (KIT),Karlsruhe,Germany;2.Institute of Nanotechnology (INT) and Institut für Angewandte Physik,Karlsruhe Institute of Technology (KIT),Karlsruhe,Germany;3.Laboratorium für Elektronenmikroskopie (LEM),Karlsruhe Institute of Technology (KIT),Karlsruhe,Germany |
| Abstract: | In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination. |
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