Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) |
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Authors: | R Bergamaschini F Montalenti L Miglio |
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Affiliation: | (1) L-NESS and Materials Science Department, University of Milano-Bicocca, Via R. Cozzi 53, 20125 Milano, Italy |
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Abstract: | We investigate ordered nucleation of Ge islands on pit-patterned Si(001) using an original hybrid Kinetic Monte Carlo model.
The method allows us to explore long time-scale evolution while using large simulation cells. We analyze the possibility to
achieve selective nucleation and island homogeneity as a function of the various parameters (flux, temperature, pit period)
able to influence the growth process. The presence of an optimal condition where the atomic diffusivity is sufficient to guarantee
nucleation only within pits, but not so large to induce significant Ostwald ripening, is clearly demonstrated. |
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Keywords: | Stranski-Krastanow growth Ge Si Patterning Kinetic Monte Carlo |
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