Effects of Mn doping on dielectric properties and energy-storage performance of Na0.5Bi0.5TiO3 thick films |
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| Affiliation: | 1. Inner Mongolia Key Laboratory of Ferroelectric-related New Energy Materials and Devices, School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China;2. Key Laboratory of Instrumentation and Dynamic Measurement of Ministry of Education, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi 030051, China;1. Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia;2. Jozef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Slovenia;1. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China;1. School of Material Science and Engineering, University of Jinan, Jinan 250022, China;2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China;1. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;2. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;3. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, China;1. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China |
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| Abstract: | Lead-free Na0.5Bi0.5Ti1?xMnxO3 (NBTMnx, x=0, 0.01, 0.03 and 0.05) ferroelectric thick films have been fabricated on LaNiO3/Si(100) substrate by using a polyvinylpyrrolidone-modified sol-gel method and the effects of Mn content on their microstructure, dielectric properties and energy-storage performance were investigated. Compared with the pure Na0.5Bi0.5TiO3 (NBT) thick films, NBTMnx thick films exhibited a large enhancement in dielectric properties and energy-storage performance. Particularly, a giant recoverable energy-storage density (W) of 30.2 J/cm3 and the corresponding efficiency (η) of 47.7% were obtained in NBTMn0.01 thick film at 2310 kV/cm. Moreover, the NBTMn0.01 thick film displayed good energy-storage stability over a large temperature range at different frequency. |
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| Keywords: | NBTMn thick films Ferroelectric Energy-storage performance Electrical properties |
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