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The control of abnormal grain growth in low-voltage SnO2 varistors by microseed addition
Authors:Mohammad Maleki Shahraki  Mohammad Golmohammad  Iman Safaee  Mehdi Delshad Chermahini
Affiliation:1. Department of Materials Engineering, Faculty of Engineering, University of Maragheh, Maragheh, P.O. Box 55181-83111, Iran;2. Renewable Energy Department, Niroo Research Institute, Shahrak Gharb, Tehran, Iran;3. Materials and Energy Research Center, Semiconductors department, Karaj, Iran;4. Faculty of Engineering, Shahrekord University, Shahrekord, Iran
Abstract:In this research, the addition effects of three different quantities of micron-sized seeds (microseeds) to a SnO2 varistor prepared from nanomaterials on the microstructure and electrical properties were studied. Moreover, surge-withstanding capability of low-voltage SnO2 varistors was investigated. The X-ray diffraction pattern disclosed a single phase SnO2 for microseed grains. The morphological features of samples were characterized using scanning electron microscopy. The abnormal distribution of grain size with elongated grains of SnO2 in fine grains matrix was observed in sintered samples without microseeds. The low content of microseed addition (0.3 wt%) had not controlled abnormal grain growth, however, it increased mean grain size to 37 µm. Although the high content of microseeds (7.5 wt%) stopped abnormal grain growth, it had a negative effect on relative density and mean grain size. The normal grain size distribution with maximum mean grain size (45 µm) was obtained in samples containing 1.5 wt% microseeds. These samples showed the lowest breakdown field (240 V/cm) and the highest surge-withstanding capability (1.5 kA/cm2). Furthermore, the standard deviation of the electrical parameters of these samples was improved due to normal grain-size distribution.
Keywords:Abnormal grain growth  Microseed  Low voltage
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