首页 | 本学科首页   官方微博 | 高级检索  
     


Facile synthesis of a carbon-rich SiAlCN precursor and investigation of its structural evolution during the polymer-ceramic conversion process
Affiliation:1. School of Materials Science and Engineering, Shenyang University of Technology, Shenyang, 110870, PR China;2. Engineering Laboratory of Advanced Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 315201, Ningbo, PR China
Abstract:A liquid carbon-rich SiAlCN precursor is facilely synthetized by hydrosilylation between liquid polyaluminocarbosilane (LPACS) and 1,3,5,7-tetravinyl- 1,3,5,7-tetramethylcyclotetrasilazane {CH3(CH2double bondCH2)SiNH]4} (TeVSZ). The structural evolution during the polymer-ceramic conversion process is investigated by various methods. The results show that the main cured mechanism is β-addition on hydrosilylation, although α-addition on hydrosilylation, polymerization of vinyl groups and dehydrocoupling reaction between N–H bonds also occur during the cured process. During the pyrolysis process, dehydrogenation and dehydrocarbonation condensation reactions, transamination reactions occur, leading to formation of a three-dimensional network inorganic structure at 400–800 °C, where part of Al–O bonds convert to Al–N bonds. Then the network inorganic structure undergoes demixing and separation into amorphous SiAlCN(O) phase, where the amorphous turbostratic free carbon phase also form at 800–1200 °C. With demixing and decomposition of the amorphous carbon-rich SiAlCN(O) phase, the crystalline β-SiC and graphitic carbon start to form at about 1400 °C, the crystalline sizes of them both enlarge with increasing temperature. However, the crystal growth of β-SiC is distinctly inhibited due to existence of the rich carbon phase, tiny amounts of Al2O3 and AlN. In addition, a small amount of AlN can promote the formation of α-SiC at 1800 °C.
Keywords:SiAlCN precursor  SiC ceramic  Hydrosilylation  Ceramic yield
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号