Evaluation of structural properties of AZO conductive films modification using low-temperature ultraviolet laser annealing |
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| Affiliation: | 1. Department of Mechanical Engineering, National Taiwan University, Taipei, 10671, Taiwan;2. Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, 30076, Taiwan;1. ICube, D-ESSP, 23 rue du L?ss, 67037 Strasbourg, France;2. Institut de Science des Matériaux de Mulhouse, IS2M-CNRS – UMR7361, 15 rue Jean Starcky, 68057 Mulhouse Cedex, France;3. Laboratoire d''étude physico-chimiques des matériaux (LEPCM), Faculté des sciences de la matière, Dép. de physique, Université Batna1, 05 Avenue Chahid Boukhlouf., Batna 05000, Algeria;1. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Republic of Korea;2. Hardram, Gyeonggi-do 156-58, Republic of Korea;3. Department of Physics, Chung-Ang University, Seoul 156-756, Republic of Korea;1. University of Twente, 7500AE Enschede, Netherlands;2. Solliance/TNO Thin Film Technology, 5656AE Eindhoven, Netherlands;3. Delft University of Technology, 2629JB Delft, Netherlands;4. Roth & Rau B.V., 5657EB Eindhoven, Netherlands;5. ECN-Solliance, HTC 21, 5656AE Eindhoven, Netherlands;6. Universidad Autónoma de San Luis Potosí, 78290 San Luis Potosí, Mexico;1. Solar Energy Research Institute, The National University of Malaysia, 43600 Bangi, Selangor, Malaysia;2. Institute of Sustainable Energy, Universiti Tenaga Nasional (@The National Energy University), Jalan IKRAM-UNITEN, 43000 Kajang, Selangor, Malaysia;3. Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, The National University of Malaysia, 43600 Bangi, Selangor, Malaysia;4. School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, New South Wales 2006, Australia |
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| Abstract: | In this study, an ultraviolet (355 nm) laser processing system was developed to anneal aluminum-doped zinc oxide (AZO) thin films at room temperature in an air atmosphere; in this system, two key parameters, laser fluence and annealing speed, were varied. The structural properties of the films were thoroughly examined using field emission scanning electron microscopy, atomic force microscopy, and X-ray diffraction (XRD). The results showed that the laser fluence not only influenced the structural properties of the films, but also improved the crystallinity of the films after the laser annealing process, with minimal changes in the thickness of the films and the concentration of the elements in the films. The root mean square surface roughness (Rrms) of the films gradually increased as the laser fluence increased. Moreover, according to the XRD pattern of the films, the intensity of the main peak corresponding to the (002) direction increased as the laser fluence increased. The average crystallite size (20 nm) of the annealed films, determined using the Scherrer equation, was smaller than that of the as-deposited thin film (22 nm) due to the low temperature effect in the laser annealing process. |
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| Keywords: | Ultraviolet laser anneal Aluminum-doped zinc oxide (AZO) film Structural characteristics Crystallinity |
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