Effect of Ar:N2 flow rate on morphology,optical and electrical properties of CCTO thin films deposited by RF magnetron sputtering |
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| Affiliation: | 1. School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Penang, Malaysia;2. School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Penang, Malaysia;3. School of Engineering, University of British Columbia, Kelowna, BC, V1V 1V7, Canada;1. Kazan E. K. Zavoisky Physical-Technical Institute (KPhTI) of the Kazan Scientific Center of the Russian Academy of Sciences, Sibirsky tract, 10/7, Kazan 420029, Russia;2. Kazan (Volga Region) Federal University, Kremlevskaya st., 18, Kazan 420008, Russia;3. Institute of Solid State Chemistry of the Russian Academy of Sciences (UB), Pervomaiskaya St., 91, Ekaterinburg 620990, Russia;4. National University of Science and Technology, Leninskii pr. 4, Moscow 119991, Russia;5. Fiber Optics Research Center, Russian Academy of Sciences, ul. Vavilova 38, Moscow 119333, Russia;1. LabMAM, Departamento de Ingeniería Química Biotecnología y Materiales, FCFM, Universidad de Chile, Santiago, Chile;2. Instituto de Física, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 6904411, Chile;3. Centro de Investigación en Nanotecnología y Materiales Avanzados, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 6904411, Chile;1. School of Physics & Materials Science, Thapar Institute of Engineering & Technology, Patiala 147004, India;2. CSIR-National Physical Laboratory, New Delhi 110012, India;3. Thin Film Group, CSIR-CSIO, Chandigarh 160030, India;1. Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai, 200090, PR China;2. Nanjing National Laboratory of Microstructures, Jiangsu Provincial Laboratory for Nanotechnology and Department of Physics, Nanjing University, Nanjing, 210093, People''s Republic of China;3. Faculty of Physics and Electronic Technology, Hubei University, Wuhan, 430062, PR China;4. University of Göttingen, F. Hund Platz 1, 37077, Germany |
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| Abstract: | Calcium copper titanate (CCTO) thin films were deposited on indium tin oxide (ITO) substrates using radio frequency (RF) magnetron sputtering, at selected Ar:N2 flow rates (1:1, 1:2, 1:4, and 1:6 sccm) at ambient temperature. The effect of Ar:N2 flow rate on the morphology, optical and electrical properties of the CCTO thin films were investigated using FESEM, XRD, AFM, Hall effect measurement, and UV–Vis spectroscopy. It was confirmed by XRD analysis that the thin films were produced is CCTO with cubic crystal structure. As the flow rate of Ar:N2 increased up to 1:6 sccm, the thin film thickness reduced from 87 nm to 35 nm while the crystallite size of CCTO thin film decreased from 27 nm to 20 nm. Consequently, the surface roughness of thin film was halved from 8.74 nm to 4.02 nm. In addition, the CCTO thin films deposited at the highest Ar:N2 flow rate studied, at 1:6 sccm; are having the highest sheet resistivity (13.27 Ω/sq) and the largest optical energy bandgap (3.68 eV). The results articulate that Ar:N2 flow rate was one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties and optical properties of CCTO thin films. |
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| Keywords: | CCTO thin film Radio frequency magnetron sputtering Surface resistivity Optical energy bandgap |
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