| 衬底温度对HfO_xN_y薄膜相关物性的影响 |
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| 引用本文： | 张丽明,王莹.衬底温度对HfO_xN_y薄膜相关物性的影响[J].应用化工,2009,38(8):1171-1173. |
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| 作者姓名： | 张丽明 王莹 |
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| 作者单位： | 商丘职业技术学院,河南,商丘,476000 |
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| 摘 要： | 采用射频反应磁控溅射法制备了HfOxNy栅介质薄膜,并研究了HfOxNy栅介质薄膜的化学特性和界面结构随淀积温度的变化而发生的变化规律。光电子能谱测试表明,随着衬底温度的升高,薄膜中的氮含量也随之增加。傅立叶红外吸收光谱研究表明,随着淀积温度的增加,界面层SiO2的厚度也逐渐增高。
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| 关 键 词： | HfOxNy薄膜 射频反应磁控溅射 化学特性 界面结构 |
Characteristics of HfOxNy thin films by rf reactive sputtering at different deposition temperatures |
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| Abstract: | The high-k dielectric HfOxNy films were prepared by rf reactive sputtering in oxygen and nitrogen surroundings.The effects of deposition temperatures on the chemical and interfacial properties of HfOxNy thin films were investigated.X-ray photoelectron spectroscopy results showed that the content of N in the films increased with deposition temperatures increasing.Fourier transform infrared spectroscopy results showed that an interfacial layer of SiO2 had been formed during deposition.The higher substrate temperature,the thicker interfacial layer. |
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| Keywords: | HfOxNy thin films rf reactive sputtering chemical property interfacial structure |
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