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SrBi4Ti4O15薄膜的溶胶凝胶制备及其生长行为
引用本文:黄平,徐廷献,季惠明.SrBi4Ti4O15薄膜的溶胶凝胶制备及其生长行为[J].硅酸盐学报,2005,33(9):1054-1059.
作者姓名:黄平  徐廷献  季惠明
作者单位:1. 天津大学材料学院,先进陶瓷与加工技术教育部重点实验室,天津,300072;太原理工大学理学院,太原,030024
2. 天津大学材料学院,先进陶瓷与加工技术教育部重点实验室,天津,300072
基金项目:国家自然科学基金重大资助项目(59995520);Nippon Sheet Glass Foundation for Materials Science and Engineering(301-05544)资助项目.
摘    要:以氯化锶、硝酸铋和钛酸丁酯为原料,柠檬酸为络合剂,配制了稳定的SrBi4Ti4O15(SBTi)前驱液.采用层层快速退火工艺,在Pt/Ti/SiO2/Si基片上制备了a轴取向增强的SBTi铁电薄膜,通过场发射扫描电镜、环境扫描电镜及X射线衍射等微观分析手段研究了保温时间和成膜次数对薄膜结晶性、微观结构和生长行为的影响.结果表明:层层快速退火工艺,可有效抑制焦绿石相的形成.随着退火时间的延长,薄膜的结晶性变好;但退火时间延长到30 min以上,薄膜的结晶性变差.由于SBTi晶体生长的各向异性及单层膜厚对晶体沿119]方向生长的限制,随着涂覆次数的增加,SBTi薄膜(119)峰和(200)峰的强度逐渐增大,而(00l)峰的强度反而略有减少,从而使I(200)/I(119)、I(200)/I(0010)、I(119)/I(0010)逐渐增大.

关 键 词:铁电薄膜  钛酸锶铋  层层快速退火  生长行为
文章编号:0454-5648(2005)09-1054-06
收稿时间:02 22 2005 12:00AM
修稿时间:06 23 2005 12:00AM

PREPARATION AND GROWTH BEHAVIOR OF SrBi4Ti4O15 FERROELECTRIC THIN EILMS BY SOL - GEL METHOD
HUANG Ping,XU Ting xian,JI Huiming.PREPARATION AND GROWTH BEHAVIOR OF SrBi4Ti4O15 FERROELECTRIC THIN EILMS BY SOL - GEL METHOD[J].Journal of The Chinese Ceramic Society,2005,33(9):1054-1059.
Authors:HUANG Ping  XU Ting xian  JI Huiming
Abstract:A stable strontium bismuth titanate(SBTi) precursor solution was prepared using strontium chloride,bismuth nitrate,and tetrabulyl titanate as raw materials,and citric acid as a complex agent.SBTi thin films with enhanced a-axis orientation were prepared on Pt/Ti/SiO_(2)/Si substrate by a layer-by-layer rapid annealing method.With the aids of field emission scanning electron microscopy,environmental scanning electron microscopy and X-ray diffraction,the effects of annealing time and number of coatings on the crystallization and the growth behavior of the SBTi thin films were investigated.The results indicate that the pyrochlore phase is restrained successfully by the layer-by-layer rapid thermal annealing method.The crystallization of the film is enhanced with the increase of annealing time;however,it is weakened when the annealing time is more then 30 min.Because of the anisotropic growth of SBTi crystals and the restriction of growth in the \ direction by the thickness of a single-annealed layer,the intensity of the(200) and(119) peaks increase with the increase of the number of coating layers,and the former peak increases more quickly.However,the intensity of the(00l) peak decreases with the increase of the number of layers,so the relative intensities of the(200) I(200)/I(119),I(200)/I(0010)] and(119) I(119)/I(0010)] peaks increase with the increase of the number of layers.
Keywords:ferroelectric films  strontium bismuth titanate  layer-by-layer rapid thermal annealing  growth behavior
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