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| 坩埚下降法生长硅酸铋闪烁晶体(英文) | |
| 引用本文： | 徐家跃,王红,何庆波,申慧,清水肇,向卫东.坩埚下降法生长硅酸铋闪烁晶体(英文)[J].硅酸盐学报,2009,37(2). |
| 作者姓名： | 徐家跃 王红 何庆波 申慧 清水肇 向卫东 |
| 作者单位： | 1. 上海应用技术学院材料工程系,上海,200235;中国科学院上海硅酸盐研究所,上海,200050 2. 中国科学院上海硅酸盐研究所,上海,200050 3. 日本东北大学核科学实验室,仙台,982-0826,日本 4. 温州大学化学与材料工程学院,浙江,温州,325035 |
| 基金项目： | 上海市科学技术委员会专项基金重点项目，上海市教委重点项目 |
| 摘 要： | 采用改进型坩埚下降法,从富Bj的高温熔体中生长了硅酸铋(Bi4Si3O12,BSO)晶体,研究了BSO晶体的析晶行为.透明晶体最大尺寸达到30mm×30mm×35mm,晶体具有良好的光学均匀性,在350～900nm波段透过率保持在约80%.相对锗酸鉍(Bi4Ge3012,BGO)晶体,BSO闪烁晶体具有快的衰减时间,有望用于能量范围在几百MeV的4 π电磁量能器. |
| 关 键 词： | 硅酸铋晶体 坩埚下降法 晶体生长 闪烁体 |
BRIDGMAN GROWTH OF Bi_4Si_3O_(12) SCINTILLATION CRYSTALS |
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| XU Jiayue,WANGHong,HE Qingbo,SHEN Hui,SHIMIZU Hajime,XIANG Weidong.BRIDGMAN GROWTH OF Bi_4Si_3O_(12) SCINTILLATION CRYSTALS[J].Journal of The Chinese Ceramic Society,2009,37(2). | |
| Authors: | XU Jiayue WANGHong HE Qingbo SHEN Hui SHIMIZU Hajime XIANG Weidong |
| Affiliation: | 1.Department of Material Science and Engineering;Shanghai Institute of Technology;Shanghai 200235;China;2.Shanghai Institute of Ceramics;Chinese Academy of Sciences;Shanghai 200050;3.Laboratory of Nuclear Science;Tohoku University;Sendai 982-0826;Japan;4.Collage of Chemistry and Materials Engineering;Wenzhou University;Wenzhou 325035;Zhejiang;China |
| Abstract: | A bismuth silicate(Bi4Si3O12,BSO)crystal with a rectangular shape and dimensions of 30 mm in width and 35 mm in height was grown by the modified Bridgman technique from Bi2O3-rich melt.The crystallization behavior of the BSO crystal was investigated.The BSO crystal has good optical uniformity and a high transmittance of about 80% in the range of 350 to 900nm.BSO crystal has potential for application in 4π electromagnetic calorimeters in the energy region of several hundred MeV because its decay time is faster than that of the famous Bi4Ge3O12 (BGO) crystal. |
| Keywords: | bismuth silicate crystal Bridgman technique crystal growth scintillator |
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