| 铜锌锡硫半导体薄膜材料的制备与表征 |
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| 引用本文： | 史成武,史高杨,陈柱,孙人杰,夏梅.铜锌锡硫半导体薄膜材料的制备与表征[J].硅酸盐学报,2011,39(7):1108-1111. |
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| 作者姓名： | 史成武 史高杨 陈柱 孙人杰 夏梅 |
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| 作者单位： | 合肥工业大学化学工程学院,合肥230009;中国科学院新型薄膜太阳电池重点实验室,合肥230031 |
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| 基金项目： | 国家自然科学基金，“973”计划重大科学问题导 向项目，安徽省年度重点科研项目计划，合肥工业大学学生创新基金 |
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| 摘 要： | 采用水热法成功制备了Cu2ZnSnS4(CZTS)半导体材料,通过浸涂法制备了相应的薄膜,并在N2气氛中于400℃对薄膜进行了退火处理.用X射线荧光光谱分析了所得CZTS粉末中各组成元素的含量,并分别用X射线衍射、扫描电子显微镜和紫外-可见-近红外光谱对CZTS薄膜样品的晶体结构、表面形貌和带隙进行了表征.结果表明:所...
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| 关 键 词： | 铜锌锡硫 水热法 薄膜 浸涂法 制备 |
Preparation of Copper Zinc Tin Sulfide Thin Film Semiconducting Materials |
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| SHI Chengwu,SHI Gaoyang,CHEN Zhu,SUN Renjie,XIA Mei.Preparation of Copper Zinc Tin Sulfide Thin Film Semiconducting Materials[J].Journal of The Chinese Ceramic Society,2011,39(7):1108-1111. |
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| Authors: | SHI Chengwu SHI Gaoyang CHEN Zhu SUN Renjie XIA Mei |
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| Affiliation: | 1,2(1.School of Chemical Engineering,Hefei University of Technology,Hefei 230009;2.Key Lab of Novel Thin Film Solar Cells,Chinese Academy of Sciences,Hefei 230031,China) |
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| Abstract: | Cu2ZnSnS4 (CZTS) semiconducting materials were firstly prepared by a hydrothermal method, and then the thin films were deposited by a dip-coating technique and post-annealed at 400 ℃ in N2 atmosphere. The chemical composition of the CZTS semiconducting materials was determined by X-ray fluorescence spectrometry. The crystal structures, surface morphology and band gaps of the CZTS thin films were characterized by X-ray diffraction, scanning electron microscope and ultraviolet-visible-near infrared spec0troscope, respectively. The results show that the chemical composition of the CZTS semiconducting materials is Cu1.90Zn0.94Sn1.00S4.30 in the nearly stoichiometric relation, and the CZTS thin films appear superior crystallinity, uniformity and free-cracks. The direct band gap was 1.51 eV, and it decreased to 1.34 eV after annealing. |
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| Keywords: | copper zinc tin sulfide hydrothermal thin film dip-coating preparation |
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