不同吸收层结构的非晶硅/锗太阳能电池转换效率的模拟计算(英文)

设计了2种太阳能电池结构：结构A为a-Si：H/a-Si0.65Ge0.35：H多吸收层结构;结构B为a-Si0.65Ge0.35：H单吸收层结构。采用AMPS-ID程序分析了2种电池结构的光电性质。模拟计算中光学吸收系数和缺陷浓度均采用实验数据以便确保模拟的可靠性。分析了2种电池结构的短路电流密度、断路电压、填充因子和转换效率。结果表明：对于结构A,当吸收层厚度达180nm时,转换效率达到饱和值6.88%;对于结构B,当吸收层厚度达45nm时,转换效率达到最大值3.44%;利用载流子产生和复合机制分析了采用多吸收层结构更有利于提高太阳能电池的转换效率。

Simulation on Conversion Efficiency of Solar Cells with Different Amorphous Silicon/Germanium Absorber Layer Structures

This paper was to design solar cells with structure A—amorphous silicon/amorphous silicon germanium(a-Si:H/a-Si0.65Ge0.35:H) multilayer absorber structures and structure B—amorphous silicon germanium(a-Si0.65Ge0.35:H) single layer absorber structures.The AMPS-ID simulation program was used to investigate the optical and electrical properties of solar cells.The experimental data such as the absorption coefficients and defect concentrations were used to assure the simulation reliability.The short circuit current density,open circuit voltage,fill factor and conversion efficiency of the solar cells were also analyzed.For the solar cell with structure A,the maximum conversion efficiency was 6.88% as the absorber layer was 180 nm.For the solar cell with structure B,the maximum con-version efficiency was 3.44% as the absorber layer was 45 nm.The electron-hole generation and recombination mechanisms could explain the improved conversion efficiency of the solar cell with structure A.A difference between the performance of solar cells with structures A and B was correlated to the electron-hole generation and recombination mechanism.