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AlN/W多层体共烧过程中的应力
引用本文:梁彤翔,朱钧国,杨冰,张秉忠,彭新立,王英华,李恒德.AlN/W多层体共烧过程中的应力[J].硅酸盐学报,1998,26(3):286-291.
作者姓名:梁彤翔  朱钧国  杨冰  张秉忠  彭新立  王英华  李恒德
作者单位:1. 清华大学核能技术设计研究院
2. 清华大学材料科学与工程系
摘    要:研究了1850℃高温烧结AlN/W多层体烧结应力状态和产生原因,结果表明AlN与W在1850℃共烧时,不同阶段烧结应力状态有所不同,在升温阶段,W层受平面拉应力作用,W层烧结速率降低,导致表面W膜内存在的大量空洞,而内部W布线受到径向拉应力的作用,在保温阶段,与表面W焊盘接触的AlN受到拉应力的作用,与内部W线接触的AlN受到环向拉应力的作用,由于环向拉应力的存在,导致AlN的烧结速度帮烧结密度显

关 键 词:应力  多层基板  电子封装  氮化铝陶瓷  烧结

SINTERING STRESSES IN CO_SINTERED AlN/W MULTILAYER SUBSTRATES
Liang Tongxiang,Zhu Junguo,Yang Bing,Zhang Bingzhong,Peng Xinli,Wang Yinghua,Li Hengde.SINTERING STRESSES IN CO_SINTERED AlN/W MULTILAYER SUBSTRATES[J].Journal of The Chinese Ceramic Society,1998,26(3):286-291.
Authors:Liang Tongxiang  Zhu Junguo  Yang Bing  Zhang Bingzhong  Peng Xinli  Wang Yinghua  Li Hengde
Abstract:The states and the causes of sintering stress produced in AlN/W co_sintered multilayer substrates were studied. Stress states are different in two stages:in the sintering stage,in_plane stresses are developed in W film which leads to high porosity and reducation of sintering rate; in the soaking stage, radial stresses are developed in AlN near the AlN/W interface, which reduces the shrinkage rate and density of AlN ceramic.
Keywords:stress  multilayer substrates  electronic packaging  AlN ceramic  sintering  
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