| 用RAP法引上技术生长KCL晶体 |
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| 引用本文： | 刘成武,郑虎.用RAP法引上技术生长KCL晶体[J].硅酸盐学报,1990,18(4):342-346. |
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| 作者姓名： | 刘成武 郑虎 |
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| 作者单位： | 黑龙江省科学院技术物理研究所
(刘成武，郑虎，王春生，刘刚，马明春)，黑龙江省科学院技术物理研究所(康桂兰) |
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| 摘 要： | 用RAP法(reactivo atmosphere process)处理KCl熔体,在不改变生长气氛和RAP继续处理的情况下,提拉生长KCl晶体,以解决高纯、大尺寸、生长速度快、成品率高和有较大经济效益的问题。
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| 关 键 词： | 氯化钾 晶体 反应气氛法 提拉法 |
GROWTH OF KCI CRYSTAL BY REACTIVE ATMOSPHERE PROCESSING(RAP) BASED ON CZOCHRALSKI METHOD |
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| Liu Chengwu Zheng Hu Wang Chunsheng Liu Gang Ma Mingchun Kang Guilan.GROWTH OF KCI CRYSTAL BY REACTIVE ATMOSPHERE PROCESSING(RAP) BASED ON CZOCHRALSKI METHOD[J].Journal of The Chinese Ceramic Society,1990,18(4):342-346. |
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| Authors: | Liu Chengwu Zheng Hu Wang Chunsheng Liu Gang Ma Mingchun Kang Guilan |
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| Abstract: | A new RAP method used in processing of the KCl melt is presented in this paper. The KCl crystals are grown with unchanged atmosphere during the processing of melt of KCl.It is found that this method can be used to obtain higher purity, bigger size, higher speed of growth of crystals, higher peccentage of finished product and better economic benefits. |
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| Keywords: | reactive atmosphere processing (RAP) KCl cryastal Czochralski method |
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