| SrBi_2Ta_2O_9薄膜的制备和铁电性能研究 |
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| 引用本文： | 周志刚,朱丽丽,郭冬云,王耘波,徐静平.SrBi_2Ta_2O_9薄膜的制备和铁电性能研究[J].信息记录材料,2001,2(4):13-14,49. |
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| 作者姓名： | 周志刚 朱丽丽 郭冬云 王耘波 徐静平 |
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| 作者单位： | 华中科技大学电子科学与技术系, |
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| 摘 要： | 用一种新的低温过程制备了SrBi2Ta2O9铁电薄膜。在Sol-Gel方法中用Pt/Ti/SiO2/Si作衬底,研究了薄膜的结构和电特性。SrBi2Ta2O9薄膜在淀积Pt上电极之前和之后都要退火,第一次退火在760乇氧压下600℃时退火30分钟,在第二次退火后薄膜结晶良好。
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| 关 键 词： | 铁电薄膜 SBT Sol-Gel法 |
Study on the Preparation and Ferroelectric Properties of SrBi2Ta2O9 Thin Films |
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| Zhou Zhigang,Zhu Lili,Guo Dongyun,Wang Yunbo,Xu Jingping.Study on the Preparation and Ferroelectric Properties of SrBi2Ta2O9 Thin Films[J].Information Recording Materials,2001,2(4):13-14,49. |
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| Authors: | Zhou Zhigang Zhu Lili Guo Dongyun Wang Yunbo Xu Jingping |
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| Abstract: | A new low temperature processing method for preparation of SrBi2Ta2O9 thin films is proposed. These thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method,their structural and electrical properties are investigated.Films are annealed before and after the top Pt electrode deposition.The lst annealing is performed in a 760 Torr oxygen atmosphere at 600℃ for 30 min, and the films are well crystallized and find grained after the 2nd annealing. |
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| Keywords: | Ferroelectric thin films SBT Sol-gel method |
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