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氧化锌半导体材料的性能研究与制备进展
引用本文:刘宇,许启明,刘珊.氧化锌半导体材料的性能研究与制备进展[J].无机盐工业,2006,38(5):11-13.
作者姓名:刘宇  许启明  刘珊
作者单位:西安建筑科技大学材料科学与工程学院,陕西,西安,710055
摘    要:氧化锌半导体材料以其优良的光电性能在光电子、传感器、透明导体等领域得到广泛应用。综述了氧化锌半导体功能材料在敏感材料、压电材料、导电薄膜等方面的性能、应用及薄膜的制备技术,相对于三维块体材料,氧化锌薄膜可以适应大规模集成电路的需要,更具发展前途和研究价值。氧化锌薄膜的性质随掺杂组分和制备条件的不同而表现出很大的差异性。

关 键 词:氧化锌  半导体材料  薄膜  光电性能
文章编号:1006-4990(2006)05-0011-03
收稿时间:2005-12-27
修稿时间:2005年12月27

Progress in properties research and preparing technology of ZnO semiconductor materials
Liu Yu,Xu Qiming,Liu Shan.Progress in properties research and preparing technology of ZnO semiconductor materials[J].Inorganic Chemicals Industry,2006,38(5):11-13.
Authors:Liu Yu  Xu Qiming  Liu Shan
Abstract:Znic oxide has a wide range of technological applications as semiconductive material including photoelectron, sense organ, tansparent conductor and others. This paper concentrates on the properties and applications of ZnO in sensitive materials, piezoelectric materials and conductive film, also on techniques which the thin film was prepared by. Contrasting with monolith materials, the ZnO thin film can meet the demands of molectron and possesses a great development future and research value. The ZnO thin film can be doped with a variety of ions and prepared with many techniques to exhibit different properties.
Keywords:ZnO  semiconductive material  thin film  optical and electrical property
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