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薄壁开口定向氮掺杂碳纳米管的制备及其优异的场发射性能
引用本文:崔同湘,吕瑞涛,康飞宇,黄正宏,王昆林,吴德海. 薄壁开口定向氮掺杂碳纳米管的制备及其优异的场发射性能[J]. 炭素, 2011, 0(1): 8-12. DOI: 10.3969/j.issn1001-8948.2011.01-002
作者姓名:崔同湘  吕瑞涛  康飞宇  黄正宏  王昆林  吴德海
作者单位:1. 清华大学,材料科学与工程系先进材料教育部重点实验室,北京,100084
2. 清华大学,机械工程系先进成型制造教育部重点实验室,北京,100084
基金项目:国家自然科学基金,中国博士后科学基金
摘    要:以乙腈为碳源,二茂铁为催化剂,用化学气相沉积(CVD)法,制备了薄壁开口定向氮掺杂的多壁碳纳米管。在780℃~860℃的生长温度范围内,随着温度的升高,碳纳米管的场发射效应增强。当生长温度为860℃时,制备碳纳米管的开启电场为0.27V/μm,阀值电场为0.49V/μm,增强因子为1.09×10^5。与其他材料相比,这种碳纳米管体现了非常优越的场发射性能。

关 键 词:碳纳米管  薄壁开口定向  氮掺杂  场发射效应

SYNTHESIS AND EXCELLENT FIELD-EMISSION PROPERTIES OF THIN-WALLED,OPEN-ENDED,WELL-ALIGNED AND N-DOPED CARBON NANOTUBES
Cui Tong-xiang,Lu Rui-tao,Kang Fei-yu,Huang Zheng-hong,Wang Kun-lin,Wu De-hai. SYNTHESIS AND EXCELLENT FIELD-EMISSION PROPERTIES OF THIN-WALLED,OPEN-ENDED,WELL-ALIGNED AND N-DOPED CARBON NANOTUBES[J]. Carbon(China), 2011, 0(1): 8-12. DOI: 10.3969/j.issn1001-8948.2011.01-002
Authors:Cui Tong-xiang  Lu Rui-tao  Kang Fei-yu  Huang Zheng-hong  Wang Kun-lin  Wu De-hai
Affiliation:Cui Tong - xiang, Lu Rui - tao, Kang Fei - yu, Huang Zheng - hong, Wang Kun - lin, Wu De - hai (1.Department of Materials Science and Engineering Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, China ; 2. Department of mechanical Engineering, Key Laboratory for advanced manufacturing by materials processing Technology of Ministry of education, Tsinghua University, Beijing 100084, China)
Abstract:Thin- walled, open- ended, aligned and N- doped multi- walled carbon nanotubes(CNTs) were synthesized using acetonitrile as carbon source, ferrocene as catalyst by chemical vapor deposition(CVD) method. It is found that the field- emission properties become better as the growth temperature rises in the range of 780--860℃.When the growth temperature is kept at 860℃ the turn-on field is 0.27V/μm, threshold field 0.49V/μm, field- enhancement factors 1.09× 10^5. Compared with other materials, this kind of CNTs show outstanding field- emission properties.
Keywords:carbon nanotubes  thin - walled open - ended  N - doped  field - emission properties
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