Low temperature reaction of point defects in ion irradiated 4H–SiC |
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| Authors: | G Litrico G Izzo L Calcagno F La Via G Foti |
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| Affiliation: | 1. Physics Department, Catania University, Via S. Sofia 64, 95123 Catania, Italy;2. CNR-IMM sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy |
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| Abstract: | The low temperature evolution of point defects induced in SiC by ion irradiation was investigated by deep level transient spectroscopy. The defects were introduced by irradiation with a 7.0 MeV beam of C+ ions at a fluence of 6 × 109 cm? 2. Annealing was then performed in the temperature range of 330–400 K in order to study the change in point defect structure with temperature. The low temperature annealing performed was observed to induce a change in the produced defects. The deep levels related to the Sx (EC ? 0.6 eV) and S2 defects (EC ? 0.7 eV) recovered with annealing while, simultaneously, a new level, S1 (EC ? 0.4 eV), was formed. The activation energy of the S1 defect is 0.94 eV, while the annealing of both the Sx and S2 levels occurred with activation energy of 0.65 eV. |
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