Novel plasma chemical vapor deposition method of carbon nanotubes at low temperature for field emission display application |
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| Affiliation: | 1. Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, South Korea;2. Division of Physics and Semiconductor Science, Wonkwang University, Iksan 570-749, South Korea;1. Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan;2. Department of Chemistry, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, 35900 Tanjong Malim, Perak, Malaysia;3. Department of Physics, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, 35900 Tanjong Malim, Perak, Malaysia;4. Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM, Serdang, Selangor, Malaysia;5. Department of Materials Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan;1. CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China;2. University of Chinese Academy of Sciences, China;3. Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China;1. Institut Jean Lamour, CNRS-Université de Lorraine, UMR N°7198, BP 70239, 54506, Vandœuvre-lès-Nancy, France;2. CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, UMR CNRS-UPS-INP N°5085, Université Toulouse 3 Paul Sabatier, Bât. CIRIMAT, 118, Route de Narbonne, 31062, Toulouse Cedex 9, France;3. ICube - Laboratoire des sciences de l''ingénieur, de l''informatique et de l''imagerie (ICube), CNRS-Université de Strasbourg, UMR N°7357, Rue Blaise Pascal CS 90032, 67081, Strasbourg Cedex, France;4. Laboratoire de Chimie Physique-Approche Multi-échelle de Milieux Complexes-Université de Lorraine, 1 Bd Arago, 57078, Metz, France;1. School of Chemistry & Chemical Engineering, Huaiyin Normal University, Jiangsu Province Key Laboratory for Chemistry of Low-Dimentional Materials, Jiangsu Key Laboratory for Biomass–Based Energy and Enzyme Technology, Huai An 223300, People’s Republic of China;2. School of Chemistry & Chemical Engineering, Jiangsu University, Zhenjiang 212013, People’s Republic of China;1. Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai 200090, China;2. Guangdong Provincial Key Laboratory of Distributed Energy Systems, Dongguan University of Technology, Dongguan 523808, China;1. Institute for Chemical Biology & Biosensing, College of Life Sciences, Qingdao University, 308 Ningxia Road, Qingdao, 266071, China;2. Key Laboratory of Dielectric and Electrolyte Functional Material Hebei Province, School of Resources and Materials, Northeastern University at Qinhuangdao, Qinhuangdao, 066004, China |
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| Abstract: | We developed a novel growth method of aligned carbon nanotubes. A high density plasma chemical vapor deposition (PECVD) has been employed to grow high-quality carbon nanotubes (CNTs) at low temperatures. High-density, aligned CNTs can be grown on Si and glass substrates. The CNTs were selectively-deposited on the patterned Ni catalyst layer, which was sputtered on Si. The CNTs exhibited a turn-on field of 0.9 V/μm and an emission current of 480 μA/cm2 at a field of 3 V/μm. |
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