(Sn_(1-x),Ni_(2x))O_2纳米颗粒膜的制备及半导体性能

为提高SnO2的半导体性能,以分析纯SnCl2.2H2O和NiCl2.6H2O为主要原料,控制不同n(Ni2+)/n(Sn2+),利用溶胶凝胶-浸渍提拉法制备了(Sn1-x,Ni2x)O2纳米颗粒膜及半导体元件。用XRD、AFM对样品的结构、形貌进行了分析,并测试了(Sn1-x,Ni2x)O2元件的半导体性能。结果表明,(Sn1-x,Ni2x)O2纳米颗粒膜表面椭球形颗粒排列致密,尺寸约30 nm,(Sn1-x,Ni2x)O2为金红石型结构,但Ni2+代替了SnO2晶格中的部分Sn4+,使其晶胞参数a轴长平均减小0.000 4 nm,c轴长平均减小0.000 3 nm;随n(Ni2+)/n(Sn2+)由0.006增大到0.03,(Sn1-x,Ni2x)O2的晶粒尺寸由约45 nm减小至约18 nm;随温度由30℃上升至150℃,n型(Sn1-x,Ni2x)O2半导体元件的电阻约减小至其10%,而纯净SnO2元件的电阻仅约减小至其15%;随n(Ni2+)/n(Sn2+)的增大,离子化杂质散射增强,(Sn1-x,Ni2x)O2内部载流子迁移率下降,元件在150℃左右的电阻也由4.8 kΩ增大至12.1 MΩ,提高了元件的半导体性能。

Preparation and Semiconductor Properties of (Sn1-x,Ni2x)O2 Nanogranular Films

In order to improve the property of semiconductor of SnO 2,(Sn1-x,Ni2x)O2 nanogranular films and semiconductor elements were prepared by sol-gel and dip-coating method with different n(Ni2+)/n(Sn2+),using analytically pure SnCl 2·2H 2O and NiCl 2·6H 2O as main raw materials.The structure and shape of the samples were analyzed with XRD and AFM.The properties of there semiconductor elements were tested and investigated.The results indicate that the sizes of the compact ellipsoidal grains on the surface of(Sn1-x,Ni2x)O2 nanogranular films are about 30 nm.The structure of(Sn1-x,Ni2x)O2 is of the rutile type,but the average crystal cell parameters,"a" and "c" decrease 0.000 4 nm and 0.000 3 nm respectively,because Sn4+ in the structure of SnO 2 is partly replaced by Ni2+.With n(Ni2+)/n(Sn2+) increased from 0.006 to 0.03,the crystal size of(Sn1-x,Ni2x)O2 decreases from about 45 nm to 18 nm.With the temperature from 30 ℃ up to 150 ℃ the resistance of the n-type(Sn1-x,Ni2x)O2 semiconductor element reduces to about its 10%,while that of the pure SnO 2 element reduces only to about its 15%.Owing to the increase of n(Ni2+)/n(Sn2+),the probability of ionization impurity dispersion increases,the carrier mobility increases and the resistance of(Sn1-x,Ni2x)O2 element increases from 4.8 kΩ to 12.1 MΩ at about 150 ℃.Therefore the semiconductor properties of the elements have been improved.