Performance Tuning and Reliability Analysis of the Electrostatically Configured Nanotube Tunnel FET with Impact of Interface Trap Charges |
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| Authors: | Gupta Ashok Kumar Raman Ashish Kumar Naveen |
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| Affiliation: | 1.VLSI design Laboratory, Department of Electronics and communications, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, 144011, India
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| Abstract: | Silicon - This paper examines, an electrostatically configured Nano-Tube Tunnel Field-Effect Transistor (ED-NTTFET). During the fabrication process, different charges such as fixed charge, oxide... |
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