首页 | 本学科首页   官方微博 | 高级检索  
     


Analytical Modeling of Threshold Voltage for Dual-Metal Double-Gate Gate-All-Around (DM-DG-GAA) MOSFET
Authors:Ganapati  Reddi  Samoju  Visweswara Rao  Jammu  Bhaskara Rao
Affiliation:1.Department of ECE, Gayatri Vidya Parishad College of Engineering (A), Visakhapatnam, 530 048, India
;
Abstract:Silicon - This paper presents, analytical modeling of surface potential,threshold voltage and DIBL for a Dual-Metal Double-Gate Gate-All-Around (DM-DG-GAA) MOSFET considering the parabolic...
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号