| 多孔石英基体上CVD法沉积氮化硅涂层的工艺、结构与性能研究 |
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| 引用本文： | 李家亮,牛金叶.多孔石英基体上CVD法沉积氮化硅涂层的工艺、结构与性能研究[J].硅酸盐通报,2011,30(5). |
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| 作者姓名： | 李家亮 牛金叶 |
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| 作者单位： | 山东理工大学化学工程学院,淄博,255049 |
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| 摘 要： | 以甲硅烷(20%甲硅烷+80%氢气)和氨气作为反应前驱体,选择孔隙率为20%左右的多孔石英陶瓷基体,采用CVD法在多孔石英基体表面制备了氮化硅涂层。研究了沉积反应温度、反应压力、反应气体配比以及沉积时间等工艺参数对附着力的影响,确定了CVD法制备氮化硅涂层的最佳工艺参数,通过对所得涂层及复合材料进行抗弯强度和介电性能的表征,探讨了氮化硅涂层对多孔石英基体力学性能和介电性能的影响。
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| 关 键 词： | CVD 多孔石英陶瓷 氮化硅涂层 |
Synthetic Techniques,Structures and Properties of Silicon Nitride Coatings Prepared by CVD on Porous Silicon Oxide Ceramics |
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| LI Jia-liang,NIU Jin-ye.Synthetic Techniques,Structures and Properties of Silicon Nitride Coatings Prepared by CVD on Porous Silicon Oxide Ceramics[J].Bulletin of the Chinese Ceramic Society,2011,30(5). |
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| Authors: | LI Jia-liang NIU Jin-ye |
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| Affiliation: | LI Jia-liang,NIU Jin-ye(School of Chemical Engineering,Shandong University of Technology,Zibo 255049,China) |
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| Abstract: | The SiH4/NH3 system was selected as precursors and the porous silicon oxide ceramic with porosity of 20% was used as substrate.Chemical vapor deposition(CVD) process was employed to deposit silicon nitride coatings on the surface of porous silicon oxide ceramics.The effect of coating parameters on the adhesive force between coatings and the porous substrate was investigated combined with the structures and properties of porous silicon oxide ceramics substrate.The influence of depositing temperature,working ... |
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| Keywords: | chemical vapor deposition(CVD) porous silicon oxide ceramic silicon nitride coatings |
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