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Relaxational dielectric anomaly in the ferroelectric phase of K2ZnCl4 |
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| Authors: | D -Y Kim J -G Yoon K H Noh S -I Kwun S Y Jeong George W Taylor |
| Affiliation: | a RCDAMP, Pusan Nat'l University, Pusan, Korea b Department of Physics, Suwon University, Kyunggi, Korea c TFA Team, Devices &, Materials Laboratory, LG Electronics Institute of Technology, Seoul, Korea d Department of Physics, Seoul Nat'l University, Seoul, Korea e Department of Physics, Pusan Nat'l University, Pusan, Korea |
| Abstract: | The temperature dependence of dielectric constant of K2ZnCl4 was measured at 10, 20, 40 and 100 kHz in the temperature range between 120 and 250 K. A relaxational dielectric anomaly was observed near 210 K for the first time. It is ascribed to domain wall pinning induced by ferroelastic micro-domains which begin to form around 200 K and behave as defects. The dielectric anomaly disappeared after several thermal cycles of heating and cooling. This may be due to the remnant ferroelastic matrix in the ferroelectric phase. |
| Keywords: | K2ZnCl4 dielectric relaxation micro-domains domain wall pinning long-range-ordered matrix |
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