Compressive thermal stress and microstructure-driven charge carrier transport in silicon oxycarbide thin films |
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| Affiliation: | 1. Fachbereich Material- Und Geowissenschaften, Technische Universität Darmstadt, Otto-Berndt-Str. 3, D-64287, Darmstadt, Germany;2. Fachbereich Elektrotechnik Und Informationstechnik, Technische Universität Darmstadt, Merckstr. 23, D-64283, Darmstadt, Germany;1. Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005, China;2. Fujian Provincial Key Laboratory of Advanced Materials, Xiamen University, Xiamen 361005, China;3. Shenzhen Research Institute of Xiamen University, Shenzhen 518057, China;1. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 02504, Republic of Korea;2. Department of Physics, Konkuk University, Seoul 05029, Republic of Korea;3. Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Jinju-si 52851, Republic of Korea;1. Departamento de Química-Física de Superficies y Procesos, Instituto de Cerámica y Vidrio (CSIC), C/Kelsen 5, 28049, Madrid, Spain;2. Departamento de Electrocerámica, Instituto de Cerámica y Vidrio (CSIC), C/Kelsen 5, 28049, Madrid, Spain |
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| Abstract: | This work correlates the charge carrier transport mechanism of silicon oxycarbide-based thin films with their morphology and thermal stress. Segregation of highly-graphitized carbon-rich, oxygen-depleted C/SiC areas homogeneously dispersed within an oxygen-rich C/SiOC matrix was seen on the 500 nm-SiOC thin films. Compressive biaxial stress induced by the mismatch with the Si-substrate thermal expansion coefficient was calculated at 109 MPa. Through Hall measurements, p-type carriers were shown dominating the SiOC film similar to monolithic samples. Thin films and monoliths have comparable carrier concentrations while the carrier mobility in SiOC thin films was 2 magnitudes higher than that of monolithic samples and is considered a consequence of the compressive thermal stress acting on the film. Improved conductivity of 16 S cm -1 is measured for the SiOC thin film sample which is assumed considering the enhanced carrier mobility alongside the reduced percolation threshold ascribed to the phase-separated morphology of the thin film. |
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| Keywords: | Polymer derived ceramics Conductivity Hall effect measurement |
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