| 高温淬火对GaAs中深施主缺陷的影响 |
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| 引用本文： | 杨瑞霞,刘力锋,郭惠.高温淬火对GaAs中深施主缺陷的影响[J].河北工业大学学报,2001,30(1):67-69. |
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| 作者姓名： | 杨瑞霞 刘力锋 郭惠 |
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| 作者单位： | 河北工业大学 电信学院, |
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| 基金项目： | 河北省自然科学基金资助项目（195051） |
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| 摘 要： | 研究了１ １２０℃ 高温淬火对非掺杂半绝缘ＬＥＣＧａＡＳ中 ＥＬ２浓度的影响．发现真空条件Ｔ，在１１２０℃热处理２ｈ～８ｈ并快速冷却后，样品中ＥＬ２浓度下降近一个数量级，提高高温过程中的 ＡＳ压，可抑制 ＥＬ２浓度的大幅下降．
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| 关 键 词： | 非掺杂半绝缘 LECGaAs 淬火 EL2浓度 AS压 抑制 |
Effects of Quenching on Deep Donor Defect EL2 in GaAs |
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| YANG Rui-xia,LIU Li-feng,GUO Hui.Effects of Quenching on Deep Donor Defect EL2 in GaAs[J].Journal of Hebei University of Technology,2001,30(1):67-69. |
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| Authors: | YANG Rui-xia LIU Li-feng GUO Hui |
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| Abstract: | The effects of quenching on EL2 concentration have been investigated for undoped semi-insulating LECGaAs. It is found that EL2 concentration can be decreased by about one order magnitude after vacuum annealing at 1120'C for 2 h ~ 8 h following by a fast cooling. The decrease in EL2 concentration can be suppressed by increasing As pressure during annealing. |
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| Keywords: | undoped send-insulating GaAs: quenching EL2 concentration As pressure: suppression |
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