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化学方法实现GaAs表面Cu的沉积
引用本文:于海霞,付浚,杨瑞霞,袁炳辉.化学方法实现GaAs表面Cu的沉积[J].河北工业大学学报,2000,29(4):21-23.
作者姓名:于海霞  付浚  杨瑞霞  袁炳辉
作者单位:河北工业大学,电气信息学院,天津,300130
基金项目:河北省自然科学基金,579043,
摘    要:用一种简单的化学方法在LEC GaAs晶体表面实现了Cu的沉积,沉积的Cu层均匀性、牢固性良好,厚度达到无限源扩散的要求。本文介绍了化学镀铜液的配制及镀铜工艺,并对化学镀铜的机理进行了讨论。

关 键 词:  砷化镓  化学方法  化学镀铜  化学沉积法

Chemical Method of Copper Deposition on the GaAs Surface
Yu Hai-xia,Fu Jun,Yang Rui-xia,Yuan Bing-hui.Chemical Method of Copper Deposition on the GaAs Surface[J].Journal of Hebei University of Technology,2000,29(4):21-23.
Authors:Yu Hai-xia  Fu Jun  Yang Rui-xia  Yuan Bing-hui
Abstract:The copper layer was deposited on the LEC GaAs surface by using a kind of simple chemical method. The uniformity and the tightness of the copper layer were excellent, and the thickness can meet the requirment of the unlimited source diffusion. The composition of the copperizing solution and the process of the copper deposition are presented, the mechanism for copper deposition is also discussed.
Keywords:chemical deposition: copper: gallium Arsenide: diffusion: chemical method
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