| 功率VDMOS开关特性与结构关系 |
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| 引用本文： | 戴显英,张鹤鸣.功率VDMOS开关特性与结构关系[J].西安电子科技大学学报,1998,25(1):98-101. |
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| 作者姓名： | 戴显英 张鹤鸣 |
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| 作者单位： | 西安电子科技大学微电子研究所 |
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| 摘 要： | ＶＤＭＯＳ的开关时间对其开关功耗和频率特性有直接影响，笔者设计和制造了３种体内结构与常规ＶＤＭＯＳ相同，而表面结构不同的器件。实验结果表明，这种３结构器件的开关时间都明显减少。
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| 关 键 词： | VDMOS 器件结构 开关时间 |
Study of the relation between the switching performance and the structure of power VDMOS |
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| Dai Xianying,Zhang Heming,Li Yuejin,Wang Wei.Study of the relation between the switching performance and the structure of power VDMOS[J].Journal of Xidian University,1998,25(1):98-101. |
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| Authors: | Dai Xianying Zhang Heming Li Yuejin Wang Wei |
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| Abstract: | The switching times of VDMOS have a direct effect on its power loss in switching process and frequency characteristics. Three kinds of VDMOS with the same body structures but different surface structures compared to the conventional VDMOS are designed and fabricated. Experimental results show that the switching times of all the three kinds of VDMOS are much shorter. |
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| Keywords: | VDMOS device structure switching time |
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