| 高功率GaAlAs/GaAsSQW激光器 |
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| 引用本文： | 宋晓伟,王玲,王玉霞,张宝顺,薄报学.高功率GaAlAs/GaAsSQW激光器[J].长春理工大学学报,1999(4). |
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| 作者姓名： | 宋晓伟 王玲 王玉霞 张宝顺 薄报学 |
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| 作者单位： | 长春光机学院高功率半导体激光国家重点实验室 |
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| 摘 要： | 利用分子束外延生长装置生长出了GaAlAs/GaAs梯度折射率分别限制单量子阱结构材料。利用该材料制作的激光二极管 ,室温连续工作 ,功率为 1W ,斜率效率达到 1 0 4W /A
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| 关 键 词： | 半导体激光器 分别限制结构 量子阱 |
High power GaAlAs/GaAs SQW lasers |
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| Song Xiaowei,Wang Ling,Wang Yuxia,Zhang Banshun,Bo Baoxue.High power GaAlAs/GaAs SQW lasers[J].Journal of Changchun University of Science and Technology,1999(4). |
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| Authors: | Song Xiaowei Wang Ling Wang Yuxia Zhang Banshun Bo Baoxue |
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| Affiliation: | National Key Lab of High Power Semiconductor Lasers of Changchun Inst.Opt.and Fine Mech. |
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| Abstract: | The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method.The output power of laser diodes with the material is up to 1W and the slope efficiency is as high as 1 04W/A. |
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| Keywords: | Semiconductor Laser SCH Single quantum well |
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