| 不同衬底上低温生长GaN形貌的AFM观察 |
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| 引用本文： | 曹传宝,Attolini G,Fornari R,Pelosi C.不同衬底上低温生长GaN形貌的AFM观察[J].北京理工大学学报(英文版),1999,8(2):130-137. |
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| 作者姓名： | 曹传宝 Attolini G Fornari R Pelosi C |
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| 作者单位： | 1. 北京理工大学材料科学研究中心,北京,100081
2. 国家研究院电磁材料研究所,43100 帕尔玛,意大利 |
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| 摘 要： | Aim To study the relationship between the substrate
temperature and the morphology and properties of GaN. Methods Applying
the hydride chemical vapor deposition method, GaN films were deposited on different kinds
of substrates, including sapphire, Si(111),Si(100),GaAs and GaP(111) both on the P face
and the Ga face. The growth was performed at low temperatures of below 700℃. XRD, Hall measurement,
cathodoluminescence (CL) and atomic force microscopy (AFM) were used to characterise the
film properties. Results It was found that the temperature and the nature
of substrate materials influence the layer morphology. Conclusion The
analysis shows that no apparent relationship exists between the optical properties and
layer morphology.
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| 关 键 词： | 氮化镓 原子力显微镜 晶体生长 氢化物气相外延 |
| 收稿时间： | 1998/10/21 0:00:00 |
AFM Observation of GaN Grown on Different Substrates at Low Temperatures |
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| Cao Chuanbao,Attolini G,Fornari R and Pelosi C.AFM Observation of GaN Grown on Different Substrates at Low Temperatures[J].Journal of Beijing Institute of Technology,1999,8(2):130-137. |
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| Authors: | Cao Chuanbao Attolini G Fornari R and Pelosi C |
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| Affiliation: | Center for Research on Materials Science, Beijing Institute of Technology, Beijing100081;MASPEC Institute CNR, 43100 Parma, Italy;MASPEC Institute CNR, 43100 Parma, Italy;MASPEC Institute CNR, 43100 Parma, Italy |
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| Abstract: | Aim To study the relationship between the substrate temperature and the morphology and properties of GaN. Methods Applying the hydride chemical vapor deposition method, GaN films were deposited on different kinds of substrates, including sapphire, Si(111),Si(100),GaAs and GaP(111) both on the P face and the Ga face. The growth was performed at low temperatures of below 700℃. XRD, Hall measurement, cathodoluminescence (CL) and atomic force microscopy (AFM) were used to characterise the film properties. Results It was found that the temperature and the nature of substrate materials influence the layer morphology. Conclusion The analysis shows that no apparent relationship exists between the optical properties and layer morphology. |
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| Keywords: | gallium nitride atomic force microscopy(AFM) crystal growth hydride vapour phase epitaxy(HVPE) |
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