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层状三元碳化物Ti3SiC2及其制备研究
引用本文:朱教群,梅炳初,陈艳林.层状三元碳化物Ti3SiC2及其制备研究[J].武汉理工大学学报,2002,24(5):36-39.
作者姓名:朱教群  梅炳初  陈艳林
作者单位:武汉理工大学
摘    要:三元碳化物Ti3SiC2属于层状六方晶体结构,空间群为P63/mmC;它同时具有金属和陶瓷的优良性能,有良好的导电和导热能力,在室温下可切削加工,在高温下有良好的热稳定性和塑性变形能力,还具有优异的抗氧化性能,抗热震等;应用CVD、SHS、HP/HIP等方法可制备该化合物,用HIP方法能制备高纯、致密的Ti3SiC2陶瓷。最近,以元素单质粉为原料,采用放电等离子烧结工艺成功制备了高纯Ti3SiC2材料。

关 键 词:层状三元碳化物  Ti3SiC2  性能  制备  放电等离子烧结  钛硅碳化物  陶瓷材料
文章编号:1671-4431(2002)05-0036-04
修稿时间:2001年11月3日

Research on Ternary Layered Carbide Ti3SiC2 and its Synthesis
Zhu Jiaoqun Mei Bingchu Chen Yanlin Assoc. Prof.,The Center for Material Research and Testing,WUT,Wuhan ,China..Research on Ternary Layered Carbide Ti3SiC2 and its Synthesis[J].Journal of Wuhan University of Technology,2002,24(5):36-39.
Authors:Zhu Jiaoqun Mei Bingchu Chen Yanlin Assoc Prof  The Center for Material Research and Testing  WUT  Wuhan  China
Affiliation:Zhu Jiaoqun Mei Bingchu Chen Yanlin Assoc. Prof.,The Center for Material Research and Testing,WUT,Wuhan 430070,China.
Abstract:Ternary layered carbide Ti 3SiC 2 has hexagonal crystal structure with space group of P6 3/mmc. The Ti 3SiC 2 material combines the merits of both metals and ceramics, good electricity and heat conductivity, plasticity and excellent chemical stability at high temperature, easy to machine at the room temperature, good oxidation resistance, not susceptibility to thermal shock. Ti 3SiC 2 can be synthesized by using CVD, SHS, HP, and HIP methods. Pure and dense Ti 3SiC 2 ceramics can be synthesized by HIP. Recently, we have successfully fabricated pure Ti 3SiC 2 material by spark plasma sintering of the elemental powders.
Keywords:Ti  3SiC  2  property  synthesis  spark plasma sintering
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