Preparation and Properties of Sapphire by Edge-defined Film-fed Growth (EFG) Method with Different Growth Directions |
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Authors: | Shangjun Xu Zhengjun Yao Guangqing Pei Xixi Luo Xiaofeng Wu Yuhua Lin |
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Affiliation: | 1.College of Material Science and Technology,Nanjing University of Aeronautics and Astronautics,Nanjing,China;2.Research Center,Unionlight Technology Company Limited,Wuxi,China |
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Abstract: | Sapphire, belonging to hexagonal crystal system, is typically anisotropic which makes it direction-sensitive. To research the effects of growth directions on properties of sapphire, c-0001] seed (c-sapphire) and a-11-20] seed (a-sapphire) were used to prepare sapphire by edge-defined film-fed growth (EFG) method. The samples were analyzed through lattice integrity, dislocation and corrosion performance by double-crystal XRD, OM, AFM, SEM and EDX. It was shown that the lattice integrities of two growth-direction crystals were both well due to the small FWHM values. While the average densities of dislocation in c-sapphire and a-sapphire were 9.2×103 and 3.9×103 cm-2 respectively, the energy of dislocation in c-sapphire was lower than that in a-sapphire. During Strong Phosphoric Acid (SPA) etching, the surface of c-sapphire basically kept smooth but in a-sapphire there were many point-like corrosion pits where aluminum and oxygen atoms lost by 2:1. Our work means that it will be promising for growing c-0001] seed sapphire by EFG if aided by parameter optimization. |
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