| 氮气流量对反应磁控溅射制备TiN_x薄膜的影响 |
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| 引用本文： | 朱秀榕,赖珍荃,蒋雅雅,范定寰.氮气流量对反应磁控溅射制备TiN_x薄膜的影响[J].南昌大学学报(工科版),2008,30(2):1. |
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| 作者姓名： | 朱秀榕 赖珍荃 蒋雅雅 范定寰 |
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| 作者单位： | 南昌大学物理学系； 南昌大学物理学系 江西南昌330031； 江西南昌330031； |
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| 基金项目： | 国家自然科学基金重点资助项目
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同济大学波与材料微结构重点实验室开放基金资助项目
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南昌大学校基金资助项目 |
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| 摘 要： | 采用直流磁控溅射法,在S i基底上制备TiNx薄膜。研究了溅射沉积过程中氮气流量对TiNx薄膜生长及性能的影响。研究发现:在其它工艺参数不变的情况下,改变N2流量,薄膜的主要成分是(110)择优取向的四方相Ti2N。随着N2流量的增加,薄膜的厚度逐渐增加,薄膜粗糙度、颗粒尺寸和电阻率
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| 关 键 词： | 氮气流量 氮化钛薄膜 磁控溅射 |
Influence of N2 Flow Rate on TiNx Thin Films Prepared by Reactive Magnetron Sputtering |
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| ZHU Xiu-rong,LAI Zhen-quan,JIANG Ya-ya,FAN Ding-huan.Influence of N2 Flow Rate on TiNx Thin Films Prepared by Reactive Magnetron Sputtering[J].Journal of Nanchang University(Engineering & Technology Edition),2008,30(2):1. |
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| Authors: | ZHU Xiu-rong LAI Zhen-quan JIANG Ya-ya FAN Ding-huan |
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| Abstract: | Titanium nitride(TiNx) thin films were prepared on Si substrates by DC reactive magnetron sputtering.The influence of N2 flow rate on the crystal orientation,the surface topography and conductivity of TiNx thin films were investigated.It is shown that the main component of the TiNx thin films is tetragonal Ti2N with(110) preferred orientation.When the flow rate of N2 increases,the thickness of the thin film increases gradually,while its surface roughness and grain size reduce,and the resistivity of the TiNx thin films decreases firstly and then increase gradually. |
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| Keywords: | TiNx thin films magnetron sputtering nitrogen flow rate |
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