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过渡金属Co与半导体单晶MoS_2 highly edge surface相互作用
引用本文:周黎明,胡永军,林彰达.过渡金属Co与半导体单晶MoS_2 highly edge surface相互作用[J].西安工业学院学报,1987(1).
作者姓名:周黎明  胡永军  林彰达
作者单位:西安工业学院物理教研室,中国科学院物理研究所,中国科学院物理研究所
摘    要:本文利用XPS(X—射线光谱)、UPS(紫外光谱)和LEED(低能电子衍射)对过渡金属Co在单晶MoS_2(垂直于B、Z的方向)高边缘密度表面亚原子单层的淀积过程进行了研究。在某亚原子单层淀积以后,MoS:芯态电子向高B、E(结合能)移动0.15ev,价带谱向高B、E移运了0.3ev,而且,在费米能级E_F以下0.8ev处有一新的“肩膀”态出现,且此“肩膀”态随着淀积的增加而增加。作者从物质的电子性质出发对这些实验结果进行了分析。

关 键 词:费米能级  功函数  能带弯曲  表面态  肖特基势垒  加氢脱硫  催化剂  结合能

Electronic interaction of Submonolayer Coverage of Transition Metal Cobalt on the Highly Edge Surace of MoS_2 Single Crystal
Zhou Liming Hu Yongjun Lin Zhangda.Electronic interaction of Submonolayer Coverage of Transition Metal Cobalt on the Highly Edge Surace of MoS_2 Single Crystal[J].Journal of Xi'an Institute of Technology,1987(1).
Authors:Zhou Liming Hu Yongjun Lin Zhangda
Affiliation:Zhou Liming Hu Yongjun Lin Zhangda
Abstract:UV=Photoelectoron Spectrotcopy (UPS), X=ray Photoelectron Spectroscopy (XPS) and Low Enerhy Electron Diffraction (LEEP) have used to study the submonolayer deposition of transition metal cobalt on the highly edge surface of MoS_2 single crystal.At a certain submonolayer coverage of Co, core level binding energy of MoS_2 and its valence band centroids move to larger binding energies by 0.15 eV and 0.3 eV,respectively. At an energy 0.8 eV, a shoulder state appears wich increases with increasing deposition of Co,These results are analyzed in regard to the electronic properties of the materials.
Keywords:Fermi level  work function  energy bandbending  surface state  Schotteky=barrier  hydrodesulfurization (HDS)  catalyst  binding energy  
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