| 一种使MLC实现准SLC效能的方法 |
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| 引用本文： | 杜加友,;王维建,;樊凌雁,;刘海銮.一种使MLC实现准SLC效能的方法[J].杭州电子科技大学学报,2014(4):84-87. |
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| 作者姓名： | 杜加友 ;王维建 ;樊凌雁 ;刘海銮 |
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| 作者单位： | [1]杭州电子科技大学,浙江杭州310018; [2]杭州华澜微科技有限公司,浙江杭州311215 |
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| 基金项目： | 国家自然科学基金资助项目（51376055）; 浙江省自然科学基金资助项目（LQ12F01001）; 浙江省科技计划公益技术研究资助项目（2013C31074） |
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| 摘 要： | FLASH存储器工艺已经普及到25 nm,并正在进军15 nm,其存储密度也从单阶存储单元提高到多阶存储单元。相比于单阶存储单元,多阶存储单元可以降低存储器的价格,但是存储性能会降低。提出了一种针对多阶存储单元器件编程的方法,该方法能够提高多阶存储单元的速度,且能够减少位错误率,从而获得接近单阶存储单元器件的性能。
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| 关 键 词： | 闪存 多阶存储单元 对偶页 |
A Method for Achieving the Performance of SLC NAND Flash by MLC NAND Flash |
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| Affiliation: | Du Jiayou, Wang Weijian, Fan Lingyan, Liu Hailuan ( 1. Hangzhou Dianzi University, Hangzhou Zhejiang 310018, China; 2. Hangzhou Sage Microdectronics Corporation, Hangzhou Zhejiang 311215, China) |
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| Abstract: | While flash memory process continuously going down from 25 nm to 15 nm, its density was upgraded from single-level cell （SLC） to multi-level cell （MLC）. Compared with SLC, MLC technology had advantage of lower price, but disadvantage of downgraded performance and reliability. The paper applied SLC- like programming methodology on MLC NAND flash. In this way, the MLC flash performance was expected to be improved as well as the bit error rate to be reduced. |
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| Keywords: | NAND flash multi-level cell paired page |
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