| 三维集成电路中的关键技术问题综述 |
| |
| 引用本文： | 王高峰,赵文生.三维集成电路中的关键技术问题综述[J].杭州电子科技大学学报,2014(2):1-7. |
| |
| 作者姓名： | 王高峰 赵文生 |
| |
| 作者单位： | 杭州电子科技大学射频电路与系统教育部重点实验室,浙江杭州310018 |
| |
| 基金项目： | 国家自然科学基金资助项目（61331007） |
| |
| 摘 要： | 评述了三维集成电路的发展状况及面临的关键技术难题。简要分析了三维集成电路的设计自动化算法,并与二维集成电路设计方法进行比较,指出了热驱动的物理设计和三维模块数据结构是制约三维集成电路设计自动化算法的关键因素。同时也详细介绍了三维集成电路中的关键互连技术——硅通孔(TSV)结构,给出了TSV的电路建模方法并对其发展趋势给予了展望。
|
| 关 键 词： | 三维集成电路 硅通孔 热驱动物理设计 建模与仿真 |
Overview of Key Technologies for 3-D ICs |
| |
| Wang Gaofeng,Zhao Wensheng.Overview of Key Technologies for 3-D ICs[J].Journal of Hangzhou Dianzi University,2014(2):1-7. |
| |
| Authors: | Wang Gaofeng Zhao Wensheng |
| |
| Affiliation: | (Key Lab. of RF Circuits and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou Zhejiang 310018, China) |
| |
| Abstract: | This paper reviews the development of three-dimensional integrated circuits（ 3-D ICs） and their key technical problems. The electronic design automation（ EDA） algorithms of 3-D ICs are briefly analyzed and compared with those of 2-D ICs. It is pointed out that the thermal-driven physical synthesis and the data structure of 3-D module are the key factors of the EDA algorithms of 3-D ICs. Finally,the TSV techniques are examined. In particular,their circuit modeling approaches are discussed in detail. The prospect of the development of TSVs was also reviewed in this paper. |
| |
| Keywords: | 3-D ICs through-silicon via（TSV） thermal-driven physical design modeling and simulation |
| 本文献已被 CNKI 维普 等数据库收录！ |
