| DMCPS/CHF3制备的F-SiCOH低k薄膜结构与沉积速率研究 |
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| 引用本文： | 王婷婷.DMCPS/CHF3制备的F-SiCOH低k薄膜结构与沉积速率研究[J].西华大学学报(自然科学版),2007,26(6):48-51. |
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| 作者姓名： | 王婷婷 |
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| 作者单位： | 苏州市职业大学教师教育系,江苏,苏州,215104 |
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| 基金项目： | 国家自然科学基金;苏州大学校科研和教改项目 |
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| 摘 要： | 以十甲基环五硅氧烷(DMCPS)和三氟甲烷(CHF3)作为反应气体,采用电子回旋共振等离子体化学气相沉积(ECR-CVD)方法,制备了氟掺杂的SiCOH低介电常数薄膜。研究发现:随着CHF3/DMCPS流量比的增大,薄膜的沉积速率呈"N"型变化。根据薄膜结构和成分的傅立叶变换红外光谱仪(FTIR)、X射线光电子能谱(XPS)以及放电等离子体中基团分步的光强度标定的发射光谱(OES)分析可知:薄膜沉积速率的变化是由于CHF3进气量的增加导致薄膜生长从以沉积F-SiCOH薄膜为主过渡到以沉积氟化非晶碳(a-C:F:H)薄膜为主的结果。
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| 关 键 词： | 低介电常数 SiCOH薄膜 氟掺杂 |
| 文章编号： | 1673-159X（2007）06-0048-04 |
| 修稿时间： | 2007-08-20 |
Investigation on the Film Structure and Deposition Rate of Low k F-SiCOH Film Prepared by DMCPS/CHF3 |
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| WANG Ting-ting.Investigation on the Film Structure and Deposition Rate of Low k F-SiCOH Film Prepared by DMCPS/CHF3[J].Journal of Xihua University:Natural Science Edition,2007,26(6):48-51. |
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| Authors: | WANG Ting-ting |
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| Abstract: | F-SiCOH films were prepared in electron cyclotron resonance chemical vapor deposition (ECR-CVD) system using DMCPS/CHF3 mixture. It was found that the deposition rate changed as an "N" shape with the increase of CHF3/DMCPS flow rate ratio. According to the analysis of the film structures and compositions using FTIR and XPS, and the analysis of the radical distributions in the plasma from OES, it is inferred that this change indicates the transition from F-SiCOH film deposition to a-C:F:H film growth. |
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| Keywords: | low dielectric constant SiCOH films F-doped |
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