| 新型8～14μm GaAs／GaAlAs红外探测器数值模拟和分析 |
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| 引用本文： | 李群,尹洁.新型8～14μm GaAs／GaAlAs红外探测器数值模拟和分析[J].北京工业大学学报,1996,22(4):7-12. |
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| 作者姓名： | 李群 尹洁 |
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| 作者单位： | [1]北京工业大学和北京市光电子技术实验室 [2]华北光电技术研究所红外室 |
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| 摘 要： | 简要介绍了红外探测器的历史和现状。在提出的一种新型ＧａＡｓ／ＧａＡｌＡｓ红外探测器的构想及已有工作的基础上，建立了一个物理模型，并进行了模拟计算，着重分析了各个器件参数对器件性能的影响，为今后设计器件打下了理论基础，在此基础上特别指出了该构想的一个新用途：外加偏压调制波长红外探测器。
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| 关 键 词： | 新构想红外探测器，电压调制波长红外探测器，数值模拟 |
The Simulation and Analysis of a New Type of 8-14 μm GaAs/GaAlAs Infrared Photodetectors |
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| Li Qun, Du Chunxia, Deng Jun, Kong Rui, Shen Guangdi.The Simulation and Analysis of a New Type of 8-14 μm GaAs/GaAlAs Infrared Photodetectors[J].Journal of Beijing Polytechnic University,1996,22(4):7-12. |
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| Authors: | Li Qun Du Chunxia Deng Jun Kong Rui Shen Guangdi |
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| Abstract: | The history and recent development of infrared detectors (IRD) are discussed; the characteristics and the existed problems of the conventional GaAs/GaAlAs quantum well infrared photodetectors (QWIP) are particularly analysed. According to a new conception of GaAs QWIPs proposed by Shen G D and the achievement gained by Du C X and Deng J, physics model is established,and numerical,simulation is conducted.The effect of the device parameters upon the device characteristics and device design are studied carefully. Moreover, The new type of GaAs/GaAlAs QWIPs with bias-tunedwavelength is presented. |
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| Keywords: | GaAs/GaAlAs infrared photodetector simulation bias-tuned wavelength |
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