Yb:ZW单晶生长缺陷和光谱性能

采用丘克拉斯基法生长了３块名义掺杂浓度分别为０．０５％、０．５％、１％的ＺｎＷＯ４：Ｙｂ３＋晶体，根据Ｘ射线粉末衍射数据计算了晶胞参数，由密度实验确定了Ｙｂ３＋是以置换Ｚｎ２＋离子的方式进入晶格．观察了组分过冷和位错蚀坑，研究了不同掺杂浓度晶体的（０１０）晶面上的位错类型、连接方式，计算了位错密度．发现随着掺杂浓度的增加，位错密度也增大，必须控制合理的生长工艺条件以减少位错密度，提高晶体质量．对晶体的吸收光谱进行了测试，并对晶体的激光性能进行了讨论．

The Growth Defect and the Spectral Characteristics of the Yb:ZW Single Crystal

These ZnWO4: Yb3+ crystals with different doping level (0.05%, 0.5%, 1%) have been made grown by the Czochalski method. According to the X-ray powder diffraction pattern, the lattice parameter is determined. The way of Yb3+ ions entering the crystal lattice as a substitute for Zn2+ is confirmed by the density experiment The component supercold and dislocation are observed. The type of the dislocation and the dislocation juncture with different doping level are studied. The dislocation density increases with the doping level. The reasonable technical parameter must be adopted in order to decrease the density of the dislocation and improve the quality of the crystal. The absorption spectra of the crystal are studied and the laser performance is discussed.