| MOSFET开关过程的研究及米勒平台振荡的抑制 |
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| 引用本文： | 刘长柱,王林军.MOSFET开关过程的研究及米勒平台振荡的抑制[J].电机与控制应用,2019,46(9):69-74. |
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| 作者姓名： | 刘长柱 王林军 |
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| 作者单位： | 上海大学 材料科学与工程学院,上海200444,上海大学 材料科学与工程学院,上海200444 |
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| 摘 要： | 设计功率MOSFET驱动电路时需重点考虑寄生参数对电路的影响。米勒电容作为MOSFET器件的一项重要参数,在驱动电路的设计时需要重点关注。重点观察了MOSFET的开通和关断过程中栅极电压、漏源极电压和漏源极电流的变化过程,并分析了米勒电容、寄生电感等寄生参数对漏源极电压和漏源极电流的影响。分析了栅极电压在米勒平台附近产生振荡的原因,并提出了抑制措施,对功率MOSFET的驱动设计具有一定的指导意义。
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| 关 键 词： | MOSFET驱动电路 米勒电容 米勒平台 振荡 |
| 收稿时间： | 2019/6/5 0:00:00 |
Analysis of MOSFET Switching Process and Suppression ofMiller Plateau Oscillation |
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| LIU Changzhu and WANG Linjun.Analysis of MOSFET Switching Process and Suppression ofMiller Plateau Oscillation[J].Electric Machines & Control Application,2019,46(9):69-74. |
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| Authors: | LIU Changzhu and WANG Linjun |
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| Affiliation: | School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China |
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| Abstract: | When designing the drive circuit of power MOSFET, the influence of parasitic parameters on the circuit should be concerned. As an important parameter of MOSFET device, Miller capacitance should be considered in the design of drive circuit. The variation of gate voltage, drain source voltage and drain source current during the turnon and turnoff of MOSFET were observed. The influences of parasitic parameters such as Miller capacitance and parasitic inductance on drain source voltage and drain source current were analyzed. The reasons of gate voltage oscillation nearby Miller plateau were analyzed, and the restraining measures were put forward. This research was instructive for the drive design of power MOSFET. |
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| Keywords: | drive circuit of MOSFET Miller capacitor Miller plateau oscillation |
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