Modeling of some electrical parameters of a MOSFET under applied uniaxial stress

A semi analytical model describing the bulk mobility for electrons in strained-Si layers as a function of applied uniaxial strain applied at the gate has been developed in this paper. The uniaxial stress has been applied through the silicon nitride cap layer. The effects of uniaxial stress are understood on all the three components of mobility i.e. phonon, columbic and surface roughness mobility. The results show that the electron mobility is a strong rising function of applied uniaxial strain. Flatband voltage, Depletion Charge density, Inversion charge density, Energy gap and Effective surface electrical field have been analytically modeled. There is a sharp increase in the vertical electrical field and inversion charge density and decrease in the energy gap, depletion charge density and the flatband voltage when the uniaxial stress is applied. The electron mobility results have also been compared with the experimentally reported results and show good agreement.