A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability |
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| Authors: | Haldun Kufluoglu Muhammad Ashraful Alam |
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| Affiliation: | (1) School of Electrical and Computer, Purdue University, Engineering 1285 Electrical Engineering Building, West Lafayette, IN 47907-1285, USA |
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| Abstract: | Theories of interface trap generation in Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) mechanisms are unified under the geometric interpretation and computational modeling of Reaction-Diffusion (R-D) theoryframework. Analytical derivations that predict the degradation are shown, simulation methodology is explained and numerical solutions are obtained. Time-exponents and degradation behavior under dynamic bias in agreement with experimental observations are discussed. Implications regarding ultra-scaled surround-gate device structures are presented. |
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| Keywords: | MOSFET reliability NBTI HCI reaction diffusion surround-gate |
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