Observation of Long Transients in the Electrical Characterization of Thin Film BST Capacitors |
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| Authors: | N K Pervez P J Hansen T R Taylor J S Speck R A York |
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| Affiliation: | 1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;2. Materials Department, University of California, Santa Barbara, California 93106 |
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| Abstract: | Charge trapping is responsible for long transient leakage currents observed in parallel plate thin film BST capacitors. The presence of such time dependence complicates the measurement of leakage current as a function of an applied voltage, with the voltage sweep introducing hysteresis in the absence of ferroelectricity. The effect of long transients on current-voltage sweeps is discussed, as well as a method of obtaining current-voltage characteristics in the presence of transient leakage currents. |
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| Keywords: | Transient leakage current barium strontium titanate BST hysteresis |
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