| 自旋转移矩纳米振荡器原理、结构与研究进展 |
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| 引用本文： | 常鸿,史欣玉,董健方,钟智勇.自旋转移矩纳米振荡器原理、结构与研究进展[J].磁性材料及器件,2019,50(5):59-64. |
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| 作者姓名： | 常鸿 史欣玉 董健方 钟智勇 |
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| 作者单位： | 核工业西南物理研究院,四川成都,610041;中国电子科技集团公司第13研究所,河北石家庄,050051;电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,611731 |
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| 摘 要： | 自旋转移矩纳米振荡器(STNO)主要依据磁电阻效应(MR)和自旋转移矩效应(STT)两种效应来工作的。自旋转移矩效应中自旋电子能够有效地控制磁性薄膜磁化矢量变化,从而STNO可以被直流偏压电流和外加直流磁场调制。由于其高集成度、高可调谐性,而且可以和CMOS工艺完全兼容,使得STNO成为了未来射频收发器的理想器件。首先简单介绍STNO的基本结构和原理,然后重点阐述近年来针对输出功率和带宽等问题而提出的最新解决办法,最后对STNO的发展前景进行了展望。
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| 关 键 词： | 自旋转移矩效应 磁电阻效应 纳米振荡器 性能 应用 |
Recent progress,principle and structure of spin-transfer torque nano-oscillator |
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| CHANG Hong,SHI Xin-yu,DONG Jian-fang,ZHONG Zhi-yong.Recent progress,principle and structure of spin-transfer torque nano-oscillator[J].Journal of Magnetic Materials and Devices,2019,50(5):59-64. |
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| Authors: | CHANG Hong SHI Xin-yu DONG Jian-fang ZHONG Zhi-yong |
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| Affiliation: | (Southwestern Institute of Physics,Chengdu 610041,China;The 13th Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China) |
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| Abstract: | Spin transfer torque nano-oscillator (STNO) is mainly based on two kinds of spintronic effects: magnetoresistance (MR) effect and spin-transfer torque (STT). Spin transfer torque effect in spintronics can effectively control the changes of the magnetization vector in magnetic thin film. The oscillation frequency can be tuned by both DC bias current and external DC magnetic field. Due to its high integration, high tunability, STNO becomes an ideal device for future RF transceivers by fully compatible with CMOS technology. This paper briefly introduces the basic structure and the principle of STNO, then focus on the latest solutions for output power and linewidth in recent years, and finally discusses the prospects of STNO. |
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| Keywords: | spin transfer torque effects magnetoresistance effects nano-oscillator properties applications |
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