Simulation of a high-voltage semiconductor resistor in development of power tab-shaped silicon resistors

The results of simulation, which is based on a mathematical model developed, and experimental studies of operation of a silicon resistor in strong electric fields and pulsed modes are given. Influence of the geometrical and electrophysical parameters of a resistive element and the measurement modes on the resistor parameters is studied. Original techniques for manufacturing PK-series silicon resistors with specified parameters and dependences are developed.