基于关断电流最大变化率的压接式IGBT模块结温提取方法

压接式绝缘栅极双极性晶体管(IGBT)模块因优越的电气性能和封装设计,受到柔性直流输电等大功率应用场合的青睐,其模块可靠性也成为大功率应用场合研究的重点,而IGBT模块结温是影响器件可靠性的重要因素。基于压接式IGBT模块双脉冲测试平台,介绍一种基于关断电流最大变化率的压接式IGBT模块结温提取方法,分析压接式IGBT芯片结温和模块关断电流最大变化率间单调变化关系,并利用压接式IGBT模块封装结构固有的寄生电感有效获取关断电流最大变化率的信息,以此来反推模块结温特性。最后通过压接式IGBT双脉冲测试平台验证了通过模块关断电流最大变化率进行压接式IGBT结温提取的可行性。

Junction Temperature Extraction with Maximum Collector Current Falling Rate during Turn-Off for Press-Pack IGBT Modules

Press-pack insulated gate bipolar transistor (IGBT) modules are characterized by advanced electric property and package design, which draws much attention from high power application such as voltage-source-converter based high-voltage-direct-current (VSC-HVDC) transmission. The reliability of IGBT modules becomes the research focus for power devices in high power application and junction temperature monitoring is closely relative to reliability analysis. Based on press-pack IGBT double-pulse test platform, this paper introduced a junction temperature extraction method with maximum collector current falling rate (diC/dt)max. And the inherent monotonic relationship between IGBT chip temperature and maximum collector current falling rate was explored. Considering the package features of press-pack IGBT modules, the intrinsic parasitic inductance within module was utilized to obtain maximum collector current falling rate and the temperature characteristics was deduced as well. Finally the experimental verification was performed by the press-pack IGBT double-pulse test platform to confirm the feasibility of proposed junction temperature extraction method with maximum collector current falling rate.