基于键合线等效电阻的IGBT模块老化失效研究

已有研究表明,键合线老化脱落失效是影响绝缘栅双极型晶体管(IGBT)可靠性的主要因素之一。以此为研究背景,首先根据IGBT模块内部键合线的结构布局与物理特性,分析键合线等效电阻与关断暂态波形的关系,建立键合线等效电阻与关断过程中密勒平台电压以及集电极电流的数学关系式,通过实验测量获得键合线等效电阻,最后分别对键合线等效电阻与键合线断裂数的关系进行定性与定量的分析,得出键合线等效电阻会随键合线断裂数的增加同方向变化,这也证明了本文所提方法的可行性和正确性。

Study of IGBT Module Aging Failure Base on Bond Wire Equivalent Resistance

Literature about the reliability of insulated gate bipolar transistor (IGBT) revealed that bond wire lift-off failure is one of the most dominant factors affecting the reliability of IGBT. This paper proposed a condition monitoring method of IGBT module based on bond-wire equivalent resistanceRJ. The theoretical analysis about the relationship between equivalent resistance of bond-wires and turn-off transient-waveform of IGBT was developed at first; and then the equation calculating equivalent resistance was established; finally, the relationship between bond-wire equivalent resistance and lift-off bond wires was analyzed qualitatively and quantitatively through experiments. It is concluded that bond-wire equivalent resistance RJ will increase with the increase of bond-wires lift-off, which validates the feasibility and correctness of the proposed method.