考虑器件工作温度影响的Si C功率MOSFET建模

提出一种基于MATLAB/Simulink的SiC功率MOSFET全工作区变温度参数建模方法。在Si基横向双扩散MOSFET模型的基础上,采用与温度相关的电流源和电压源补偿器件漏极电流和阈值电压的变化。通过补充实验拓展SiC功率MOSFET的饱和区工作特性曲线,并根据Si C功率MOSFET的工作特性,采用数学拟合的方法来提取模型参数。在保留各个参数物理意义的同时,摆脱建模过程对物理参数的依赖。在不同电压、电流及温度(25~200℃)的情况下对器件的输出特性、转移特性、阈值电压、导通电阻及开关损耗进行测试,将测试结果与MATLAB/Simulink模型仿真结果进行性比较。模型仿真结果与实际测试结果一致,开关损耗误差在7%之内,验证了模型的准确性及有效性,为实际应用Si C功率MOSFET时系统性能及损耗分析提供参考依据。

Modeling of SiC Power MOSFET Considering the Influence of Working Temperature

A modeling method for the variable temperature in the whole working region based on MATLAB/Simulink was proposed.Based on the Si lateral double-diffused MOSFET model,the operating characteristic curves of SiC power MOSFET in the saturation zone was expanded by supplementary experiments.The model parameters were extracted by mathematical fitting according to the working characteristics of SiC power MOSFET.The modeling process was free from the dependence on physical parameters,while retaining the physical meaning of each parameter.Output characteristic,transfer characteristic,threshold voltage,on-resistance and switching loss of the device were verified by the experimental test at different voltages,currents and temperatures(from 25℃ to 125℃).The simulation results based on the MATLAB/Simulink model are consistent with the experimental test results,and the switching loss error was within 7%,which verified the accuracy and effectiveness of the proposed model.The system performance analysis and loss analysis in practical application of SiC power MOSFET could be estimated according to the proposed model.