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环栅喷淋泡沫塔欧拉–离散相模型三相除尘模拟
引用本文:李立清,胡蔷,黄贵杰,叶恒棣.环栅喷淋泡沫塔欧拉–离散相模型三相除尘模拟[J].中国电机工程学报,2012(5):68-77.
作者姓名:李立清  胡蔷  黄贵杰  叶恒棣
作者单位:中南大学能源科学与工程学院;中冶长天国际工程有限责任公司
基金项目:国家自然科学基金(20976200);湖南省节能减排重大专项(08SK1003)~~
摘    要:采用欧拉(Euler)多相流模型与离散相模型(discretephase model,DPM)对脱硫除尘实验装置内部的气液固三相流流动进行三维湍流数值分析。在Euler坐标系中采用双流体模型来表述气液两相的相互耦合,同时在拉格朗日坐标系中考察颗粒的运动,把烟尘颗粒对气液两相的影响耦合于双流体模型中。通过对流场数值模拟计算结果的实验验证,得出此数学模型的可行性;分析脱硫除尘塔内部流场流动,得出气液固三相流特征,为脱硫模拟及结构优化设计提供依据;得出脱硫除尘塔除尘效率与颗粒粒径、进气风速、喷淋液气比等参数的相互关系;得出脱硫除尘塔进出口压差与烟气流量、液气比、烟尘浓度等参数的相互关系。

关 键 词:欧拉  离散相模型  三相流  雷诺应力模型  除尘效率  装置阻力  数值模拟

Numerical Simulation of Three-phase Flow in the Scrubber for a Cascade-ring Foam Tower Using a Combined Euler-discrete Phase Model
Affiliation:LI Liqing1,HU Qiang1,HUANG Guijie1,YE Hengli2(1.Central South University;2.CIE International Engineering Co.,Ltd.)
Abstract:A multifluid Eulerian computational fluid dynamics model combined with(discrete phase model,DPM) was used to simulate a three-dimensional three-phase wet scrubber.Two-fluid approach was introduced to simulate the three dimensional gas-fluid flows,and the particles were traced in the Lagrangian frame,of which the effects on gas-liquid flow were coupled in two-fluid model.The numerical simulation experiments were carried out,which show that the experimental results are in good agreement with the simulated ones.The numerical solution of the three dimensional flow fields has been analyzed,obtaining the characteristics of three phase flow,which can provide fundamental basis for optimization and simulation of the desulphurization process.The relationships between the efficiency of dust collection and operating parameters,such as the particle sizes,inlet velocity,and gas liquid ratio,are obtained by the numerical simulation;the relationships between the resistance of the device and operating parameters,such as gas flow,gas liquid ratio and dust concentration,are also extracted by simulating.
Keywords:Eulerian  discrete phase model(DPM)  three-phase flow  Reynolds stress model(RSM)  efficiency of dust collection  resistance of the device  numerical simulation
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