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对三电平IGBT变流器两种缓冲电路的研究
引用本文:赵正毅,杨潮,赵良炳. 对三电平IGBT变流器两种缓冲电路的研究[J]. 中国电机工程学报, 2000, 20(12): 42-46
作者姓名:赵正毅  杨潮  赵良炳
作者单位:清华大学电机系柔性输电研究所,北京,100084
摘    要:总结了三电平变流器的几种缓冲电路,分析了IGBT的失效特点,并进一步提出了两种应用于三电平IGBT变流器的新型缓冲电路。这两种缓冲电路有效地钳制了每个IGBT关断时的dv/dt和过电压。其中第1种缓冲电路最简单,没有内外IGBT电压不均现象。实验波形证实,这两种电路都是可行的。

关 键 词:变流器 IGBT 缓冲电路 三电平
修稿时间:2000-06-14

RESEARCH ON TWO SNUBBERS FOR THREE-LEVEL IGBT CONVERTERS
ZHAO Zheng-yi,YANG Chao,ZHAO Liang-bing. RESEARCH ON TWO SNUBBERS FOR THREE-LEVEL IGBT CONVERTERS[J]. Proceedings of the CSEE, 2000, 20(12): 42-46
Authors:ZHAO Zheng-yi  YANG Chao  ZHAO Liang-bing
Abstract:Several snubbers for three level converters are discussed. Two snubbers for three level IGBT converters are presented, both of which are effective in restriction of the d v /d t and the over voltage across each IGBT when turned off. The first is the simplest and there is no voltage unbalance between the inner and outer IGBTs. The experimental results demonstrate the validity of the both snubbers.
Keywords:snubber   three level converter   IGBT(Insulated Gate Bipolar Transistor)
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